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Magazine Name : Ieee Transactions On Electron Devices

Year : 2002 Volume number : 49 Issue: 07

Ballistic And Tunneling Gaas Static Induction Transistors: Nano-Devices For Thz Electronics (Article)
Subject: Ballistic Transistor , Ballistic Transport , Gaas Transistor , Molecular Layer Epitaxy (Mle)
Author: J Nishizawa      P Ptotka      T Kurabayashi     
page:      1102 - 1111
Calculation Of Gain And Noise With Dead Space For Gaas And A1 Ga1-X As Avalanche Photodiode (Article)
Subject: Avalache Multiplication , Avalanche Photodiodes , Dead-Space Effect , Excess Noise Factor
Author: X. Li      X Zheng      S Wang      F Ma     
page:      1112 - 1117
Nonmelt Laser Annealing Of 5-Ke V And 1-Ke V Boron-Implanted Silicon (Article)
Subject: Boron , Heavily Doped , Laser Annealing , Mobility
Author: S Earles      M Law      R Brindos      K Jones     
page:      1118 - 1123
Cmos Photodiode With Enhanced Responsivity For The Uv/Blue Spectral Range (Article)
Subject: Cmos , Digital Versatile Disk (Dvd) , Digital Video Recording (Dvr) , Optoetectronic Integrated Circuits (Oeic)
Author: A Ghazi      H Zimmermann      P Seegebrecht     
page:      1124 - 1128
1.3-Um N-Type Modulation-Doped A1galnas/A1galnas Strain-Compensated Multiple-Quantum-Well Laser Diodes (Article)
Subject: Algainas , Modulation-Doped Barrier , Straincompensated Multiple-Quantum-Well Laser Diodes
Author: P.-H Lei      C.-C Lin      W. J Ho      M.C. Wu     
page:      1129 - 1135
Integration And Characterization Of Amorphous Silicon Thin-Film Transistor And Mo-Tips For Active-Matrix Cathodes (Article)
Subject: Active Matrix Cathodes , Amorphous Si Tft , Field Emission Display , Field Emitter Arrays
Author: D.-H Kim      Y. H Song      Y.-R Cho      C. S Hwang     
page:      1136 - 1142
A New Driving Waveform To Improve Dark Room Contrast Ratio In Ac Plasma Display Panel (Article)
Subject: Ac Plasma Display Panels (Pdp) , Dark Room Contrast Ratio , Discharge
Author: C. H Park      S. H Lee      D.-H Kim      J.-H Ryu     
page:      1143 - 1150
Plasma-Charging Effects On Submicron Mos Devices (Article)
Subject: Amorphous Silicon , Antenna , High Dielectric Constant Material , Mos
Author: P.-J Tzeng      Y.-Y.I Chang      C. C Yeh      C. C Chen     
page:      1151 - 1157
Investigation Of Hole-Tunneling Current Through Ultrathin Oxynitride/Oxide Stack Gate Dielectrics In P-Mosfets (Article)
Subject: Hole Tunneling Current , Mosfet , No Stack , Scaling Limits
Author: H. Y Yu      Y.-T Hou      M.-F Li      D.-L Kwong     
page:      1158 - 1164
Recoiled-Oxygen-Free Processing For 1.5 Nm Sion Gate-Dielectric In Sub-100-Nm Cmos Technology (Article)
Subject: Cmosfets , Dielectric Films , Ion Implantation , Oxidation
Author: M Togo      S Kimura      T Mogami     
page:      1165 - 1171
Accurate And Computationally Efficient Analytical 1-D Ion Implantation Models Based On Legendre Polynomials (Article)
Subject: Analytical Model , Ion Implantation , Modeling , Tcad
Author: D Li      G Shrivastav      G Wang      Y Chen     
page:      1172 - 1182
A Comparative Study Of Dopant Activation In Boron, Bf2, Arsenic, And Phosphorus Implanted Silicon (Article)
Subject: Diffusion Processes , Doping , Impurities , Semiconductor Process Modeling
Author: A Mokhberi      P.B Griffin      J.D Plummer      E Paton     
page:      1183 - 1191
Suppression Of Stress-Induced Leakage Current After Fowler-Nordheim Stressing By Deuterium Pyrogenic Oxidation And Deuterated Poly-Si Deposition (Article)
Subject: Deuterium , Gate Oxide , Mos Capacitors , Oxidation
Author: Y Mitani      H Satake      H Itoh      A Toriumi     
page:      1192 - 1197
Modeling Of Drain Current Overshoot And Recombination Lifetime Extraction In Floating-Body Submicron Soi Mosfets (Article)
Subject: Drain Current Overshoot , Floating-Body Effects , Recombination Lifetime , Silicon-On-Insulator (Soi)
Author: D Munteanu      A.-M Lonescu     
page:      1198 - 1205
Mos Varactor Modeling With A Subcircuit Utilizing The Bsim3v3 Model (Article)
Subject: Circuit Simulation , Mos Capacitors , Quality Factor , Rf
Author: K Molnar      E Seebacher      Z Huszka     
page:      1206 - 1211
Quantum Simulations Of An Ultrashort Channel Single-Gated N-Mosfet On Soi (Article)
Subject: Silicon-On-Insulator (Soi) , Single-Gated Mosfet , Quantum Mechanical Calculations , Ballistic Transport
Author: J Knoch      B Lengeler      J Appenzeller     
page:      1212 - 1218
Series Resistance Calculation For Source/Drain Extension Regions Using 2-D Device Simulation (Article)
Subject: Error Analysis , Extraction Methods , Mos Device Scaling , Parameter Estimation
Author: C.-H Choi      M. Y Kwong      R Kasnavi      P Griffin     
page:      1219 - 1226
Dopant Profile And Gate Geometric Effects On Polysilicon Gate Depletion In Scaled Mos (Article)
Subject: Capacitance-Voltage (C-V) , Dopant Profile , Gate Geometry , Polydepletion
Author: C.-H Choi      P. R Chidambaram      R Khamankar      C. F Machala     
page:      1227 - 1231
Model And Analysis Of Gate Leakage Current In Ultrathin Nitrided Oxide Mosfets (Article)
Subject: 1/F Noise , Gate Leakage Current , Inelastic Trap-Assisted Tunneling (Itat) , Polysilicon Effect
Author: J Lee      G Bosman      K. R Green      D Ladwig     
page:      1232 - 1241
A Drift-Diffusion/Monte Carlo Simulation Methodology For Si1-X Hbt Design (Article)
Subject: Bipolar , Delay Analysis , Device Simulation , Monte Carlo Simulation
Author: P Palestri      M Mastrapasqua      A Pacelli      C. A King     
page:      1242 - 1249
Hierarchical 2-D Dd And Hd Noise Simulations Of Si And Sige Devices-Part I: Theory (Article)
Subject: Device Simulation , Monte Carlo , Noise , Silicon
Author: C Jungemann      B Neinhus      B Meinerzhagen     
page:      1250 - 1257
Hierarchical 2-D Dd And Hd Noise Simulations Of Si And Sige Devices-Part Ii:Results (Article)
Subject: Device Simulation , Heterojunction Bipolar Transistor (Hbt) , Monte Carlo , Noise
Author: C Jungemann      B Neinhus      S Decker      B Meinerzhagen     
page:      1258 - 1264
An Explicit Expression For Surface Potential At High-End Of Moderate Inversion (Article)
Subject: Circuit Model , Ioff-Ion Characteristics , Moderate Inversion , Source Resistance
Author: N Shigyo     
page:      1265 - 1273
A New Look At The Antenna Effect (Article)
Subject: Antenna Ratio (Ar) , Electron Shading , Process-Induced Damage (Pid) , Topography-Dependent Charging (Tdc)
Author: D. P Verret      A Krishnan      S Krishnan     
page:      1274 - 1282
Electron-Electron Interaction Signature Peak In The Substrate Current Versus Gate Voltage Characteristics Of N-Channel Silicon Mosfets (Article)
Subject: Electron-Electron Interactions , Electron Energy Distribution , Electron-Phonon Interactions , Hot-Carrier
Author: K. G Anil      S Mahapatra      I Eisele     
page:      1283 - 1288
Soi N-Mosfet Low-Frequency Noise Measurements And Modeling From Room Temperature Up To 250 C (Article)
Subject: Body Effects , Lorentzian , Noise Measurement , Noise Model
Author: V Dessard      B Iniguez      S Adriaensen      D Flandre     
page:      1289 - 1295
Chisel Flash Eeprom-Part I: Performance And Scaling (Article)
Subject: Channel Hot Electron (Che) , Channel Initiated Secondary Electron (Chisel) , Device Scaling , Flash Eeprom
Author: S Mahapatra      S Shukuri      J Bude     
page:      1296 - 1301
Chisel Flash Eeprom-Part Ii: Reliability (Article)
Subject: Channel Hot Electron (Che) , Channel Initiated Secondary Electron (Chisel) , Cycling Endurance , Data Retention
Author: S Mahapatra      S Shukuri      J Bude     
page:      1302 - 1307
Scaling Of Microwave Noise And Small-Signal Parameters Of Inp/Ingaas Dhbt With High Dc Current Gain (Article)
Subject: Double Heterojunction Bipolar Transistor (Hbt) , External Base-Collector Capacitor , Heterojunction Bipolar Transistor (Hbt) , Inp
Author: Y. Z Xiong      G.-I Ng      H Wang      C. L Law     
page:      1308 - 1311
Estimating Lateral Straggling Of Indium Implanted Into Crystalline Silicon (Article)
Subject: Indium , Ion Implantation , Lateral Straggling
Author: K Suzuki      R Sudo      H Tashiro     
page:      1312 - 1313
An Analytical Model For Flat-Band Polysilicon Quantization In Mos Devices (Article)
Subject: Modeling , Mos Devices , Polysilicon , Quantization
Author: A. S Spinelli      R Clerc      G Ghibaudo     
page:      1314 - 1315
A New Low-Loss Lateral Trench Sidewall Schottky (Ltss) Rectifier On Soi With High And Sharp Breakdown Voltage (Article)
Subject: Barrier Lowering , Breakdown Voltage , Lateral Schottky , Numerical Simulation
Author: M.J Kumar      Y. Singh     
page:      1316 - 1318
Improvement Of Polycrystalline Silicon Thin Film Transistor Using Oxygen Plasma Pretreatment Before Laser Crystallization (Article)
Subject: Interface , Laser Crystallization , Oxygen Plasma , Poly-Si Tft
Author: K. C Moon      J.-H Lee      M.-K Han     
page:      1319 - 1321
Equivalent Junction Method To Predict 3-D Effect Of Curved-Abrupt P-N Junctions (Article)
Subject: Breakdown Voltage , Curvature Of The Lateral Radius , Curve Effect , Three-Dimensional (3-D) P-N Junction
Author: J He      X Xi      M Chan      C Hu     
page:      1322 - 1325